| PART |
Description |
Maker |
| 1S922 1S923 1S923TR 1S922TR |
Small Signal Diode 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35
Small Signal Diode 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35
High Conductance Fast Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| CPR1-120LEADFREE CPR1-080LEADFREE CPR1-100LEADFREE |
1 A, 1200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 800 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 1000 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 100 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 600 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 400 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
|
Central Semiconductor, Corp.
|
| VS-10BQ040TRPBF |
DIODE 40 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, SIMILAR TO DO-214AA, SMB, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| BAT42-TAP |
DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
|
Vishay Semiconductors
|
| RGP10KE RGP10AE RGP10DE RGP10BE RGP10JE |
DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Signal Diode
Diodes
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| 1N914 |
DIODE 0.075 A, SILICON, SIGNAL DIODE, DO-204AH, GLASS, DO-35, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| SB01-05Q SB01-05Q-E |
0.1 A, 50 V, SILICON, SIGNAL DIODE
50V, 100mA Rectifier Shottky Barrier Diode
Small signal(single type)
DIODE SCHOTTKY 50V 0.1A 3MCP
|
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| 1N4150UR-11 1N4150UR-1 JAN1N4150UR-1 |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| BAT85 |
DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-204AH, GLASS, DO-35, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| JANS1N6663 |
Signal or Computer Diode; Package: B; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 600; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
|
|
